Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display
- 20 October 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (16) , 3233-3235
- https://doi.org/10.1063/1.1617372
Abstract
We report on opto-electrical properties of a current-driven 200 dpi active-matrix organic polymer red light-emitting display (AM–PLED) based on four hydrogenated amorphous silicon thin-film transistor pixel electrode circuits. The AM–PLED luminance and effective light-emission efficiency were 30 cd/m2 and 0.3 cd/A, respectively, at the data current equal to 25 mA. The display electroluminescent spectrum has a peak located at and the full width at half maximum value of 644 and 95 nm, respectively, and Commission Internationale de l’Eclairage color coordinates of (0.66,0.33).Keywords
This publication has 2 references indexed in Scilit:
- Integrating sphere charge coupled device-based measurement method for organic light-emitting devicesReview of Scientific Instruments, 2003
- Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displaysIEEE Electron Device Letters, 2000