Decrease of FET threshold voltage due to boron depletion during thermal oxidation
- 30 June 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (6) , 467-474
- https://doi.org/10.1016/0038-1101(71)90056-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964