Reactions of thin molybdenum films on silicon induced by argon and xenon irradiation
- 1 November 1988
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 1 (2) , 165-170
- https://doi.org/10.1016/0921-5107(88)90017-7
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- A computer program for the analysis of RBS spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- As+ implantation and transient annealing of MoSi2 thin filmsJournal of Vacuum Science & Technology A, 1985
- Cobalt silicide formation by ion mixingThin Solid Films, 1984
- Ion beam mixing at nickel-silicon interfacesJournal of Applied Physics, 1982
- Theoretical aspects of atomic mixing by ion beamsNuclear Instruments and Methods, 1981
- Distortion of depth profiles during ion bombardment II. Mixing mechanismsNuclear Instruments and Methods, 1981
- Refractory metal silicide formation induced by As+ implantationApplied Physics Letters, 1980
- Reaction of Mo Thin Films on Si (100) SurfacesJournal of the Electrochemical Society, 1980
- Ion-induced silicide formation in niobium thin filmsRadiation Effects, 1979
- Reaction kinetics of molybdenum thin films on silicon (111) surfaceJournal of Applied Physics, 1978