Very broad band TWAs to 80 GHz on GaAs substrate
- 1 September 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 372-373
- https://doi.org/10.1109/euma.1993.336896
Abstract
Traveling Wave Amplifiers were fabricated successfully with a gain of 9.3 dB + 0.6 dB in the frequency range from 5 GHz to 80 GHz measured on-wafer. The associated input and output matching are better than -10 dB up to 70 GHz. To our knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. Each TWA stage comprises a cascode pair of transistors with 0.16 μm gate length. For the first time Cascode transistors in CPW-technology were used for a TWA achieving a gain bandwidth product of 744 GHz*dB.Keywords
This publication has 4 references indexed in Scilit:
- A stable GaAs 6-20 GHz high gain and power TWAPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- MODFET technology optimization for MMICs using statistical microwave characterizationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise modelsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992