Arsenic incorporation in HgCdTe grown by molecular beam epitaxy
- 6 April 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (14) , 1694-1696
- https://doi.org/10.1063/1.121154
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Analysis of low doping limitation in molecular beam epitaxially grown HgCdTe(211)B epitaxial layersJournal of Electronic Materials, 1995
- Recent progress in the doping of MBE HgCdTePublished by SPIE-Intl Soc Optical Eng ,1995
- Chemical doping of HgCdTe by molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1990
- Electrical properties of intrinsic p-type shallow levels in HgCdTe grown by molecular-beam epitaxy in the (111)B orientationJournal of Vacuum Science & Technology A, 1989
- Long and middle wavelength infrared photodiodes fabricated with Hg1−x CdxTe grown by molecular-beam epitaxyJournal of Applied Physics, 1989
- Optically pumped LPE-grown Hg1−xCdxTe lasersJournal of Electronic Materials, 1979