High-performance heat sinking for VLSI
- 1 May 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 2 (5) , 126-129
- https://doi.org/10.1109/edl.1981.25367
Abstract
The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high-aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water-cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71°C above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh-speed VLSI circuits.Keywords
This publication has 6 references indexed in Scilit:
- Electron-beam lithography for small MOSFET'sIEEE Transactions on Electron Devices, 1981
- Fundamental limits in digital information processingProceedings of the IEEE, 1981
- Anisotropic etching of siliconIEEE Transactions on Electron Devices, 1978
- Physical limits in digital electronicsProceedings of the IEEE, 1975
- Molten Salts: Volume 4, Part 1, Fluorides and Mixtures Electrical Conductance, Density, Viscosity, and Surface Tension DataJournal of Physical and Chemical Reference Data, 1974
- Field Assisted Glass-Metal SealingJournal of Applied Physics, 1969