Design of a temperature stable surface-acoustic-wave device on silicon
- 17 August 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (17) , 536-538
- https://doi.org/10.1049/el:19780364
Abstract
We show that the SiO2/Si is a suitable surface-acoustic-wave structure for integrated oscillators. By adjusting the thickness of the SiO2, layer we can annul the first-order temperature coefficient of the phase delay. In this case the second-order temperature coefficient of frequency is equal to −4.5×10−8/(°C)2 and it is close to that of the quartz ST-X.Keywords
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