Addendum to "Variational principles for solving nonlinear Poisson equations for the potential of impurity ions in semiconductors with spatially variable dielectric constants"
- 15 November 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 20 (10) , 4372-4374
- https://doi.org/10.1103/physrevb.20.4372
Abstract
In the above-named paper, a simplified form of the nonlinear Poisson equation for the impurity-ion potential has been solved approximately by making use of an equivalent variational principle. The difference between the exact and the simplified nonlinear Poisson equations is a term involving the derivative of the potential and the derivative of the spatially variable dielectric constant. The purpose of the present paper is the presentation of a more general variational principle, by which one might obtain an approximate solution of the exact nonlinear Poisson equation.Keywords
This publication has 6 references indexed in Scilit:
- Erratum: Variational principles for solving nonlinear Poisson equations for the potential of impurity ions in semiconductors with spatially variable dielectric constantsPhysical Review B, 1978
- Variational principles for solving nonlinear Poisson equations for the potential of impurity ions in semiconductors with spatially variable dielectric constantsPhysical Review B, 1978
- Variational principles for solving nonlinear Poisson equations for the potential of impurity ions in semiconductorsPhysical Review B, 1976
- Theory of the screening of impurity ions in semiconductors with spatially-variable dielectric constantsPhysical Review B, 1976
- XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductorsJournal of Computers in Education, 1955
- The Application of the Fermi-Thomas Statistical Model to the Calculation of Potential Distribution in Positive IonsPhysical Review B, 1930