Diffusion coefficient of boron in tungsten silicide
- 3 September 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (10) , 1018-1019
- https://doi.org/10.1063/1.104277
Abstract
We developed a method of determining the impurity diffusion coefficient in tungsten silicide. We modeled the lateral diffusion profiles in tungsten silicide wire, which enabled us to determine the diffusion coefficient of boron from the three-dimensional secondary-ion mass spectrometry impurity profiles as to be of the order of 10−8 cm2/s at 900 °C. This was the first estimate of the impurity diffusion coefficient in silicide, and revealed that it is more than one million times larger than that in silicon.Keywords
This publication has 1 reference indexed in Scilit:
- Boron diffusion in polycrystalline silicon layersSolid-State Electronics, 1975