Enhanced Surface Reactions

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Abstract
The intent of this paper is to clarify the reaction mechanism of the etching of (111)‐oriented n‐silicon and n‐germanium in an etching solution of fum. , conc. , conc. , and glacial acetic acid. By comparing the temperature dependence of the etching rates and the temperature dependence of the viscosities of the etching solutions it was possible to show with some reliability that the investigated etching processes are diffusion controlled reactions. The performed mathematical calculations possibly allow the forecast of the effect of organic moderators and inhibitors in diffusion controlled etching systems, if the viscosity is known.

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