Monitoring secondary ions during ion etching

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Abstract
Impurity contamination on etched surfaces and controllability of ion etching are important for the application of ion beam etching. In this paper, the feasibility of detecting and monitoring secondary ions emitted from the etched surface during ion etching are investigated. The experimental apparatus is composed of an improved mass filter of the quadrupole type together with a conventional ion beam etching system equipped with a Kaufman-type ion source. Experiments are carried out to detect secondary ions, examine impurity contamination, and monitor layer interfaces. A collimator and an energy filter are placed in front of the conventional quadrupole mass filter because of the large diameter ion beam. Consequently, redeposition of sputtered atoms on the sample surface is clearly observed, and the layer interfaces are monitored.

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