Birefringence Caused by Edge Dislocations in Silicon
- 1 May 1958
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (3) , 620-623
- https://doi.org/10.1103/physrev.110.620
Abstract
A calculation is given of the intensity distribution in a beam of plane polarized or circularly polarized infrared light after transmission through a crystal of silicon containing a single-edge dislocation or a simple tilt boundary. It is apparent that care must be taken to differentiate between an edge dislocation and the region around the extremum of an inclusion, since both give similar intensity contours, the only difference being one of absolute magnitude.Keywords
This publication has 2 references indexed in Scilit:
- Deformation twinning in the diamond structureProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- Photographs of the Stress Field Around Edge DislocationsPhysical Review B, 1956