Influence of the dielectric roughness on the performance of pentacene transistors
Top Cited Papers
- 8 November 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (19) , 4400-4402
- https://doi.org/10.1063/1.1815042
Abstract
The properties of the dielectric strongly influence the performance of organic thin-film transistors. In this letter, we show experimental results that quantify the influence of the roughness of the dielectric on the mobility of pentacene transistors and discuss the cause of it. We consider the movement of charge carriers out of the “roughness valleys” or across those valleys at the dielectric–semiconductor interface as the limiting step for the roughness-dependent mobility in the transistor channel.Keywords
This publication has 8 references indexed in Scilit:
- Surface-scattering effects in polycrystalline silicon thin-film transistorsApplied Physics Letters, 2003
- Modeling of transport in polycrystalline organic semiconductor filmsApplied Physics Letters, 2003
- Tunable electronic lens using a gradient polymer network liquid crystalApplied Physics Letters, 2003
- High Performance Organic Thin Film TransistorsMRS Proceedings, 2003
- Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transportJournal of Applied Physics, 2003
- Carrier transport and density of state distributions in pentacene transistorsPhysical Review B, 2002
- An analytical model for organic-based thin-film transistorsJournal of Applied Physics, 1991
- A physically based mobility model for numerical simulation of nonplanar devicesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988