High temperature stable metal-GaAs contacts

• 1 January 1979
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1979.189658

Abstract

Keywords

• GOLD
• GALLIUM ARSENIDE
• SCHOTTKY BARRIER
• PASSIVATION
• ANNEALING
• DIODES