Thermoelectric figure of merit of boron phosphide
- 1 May 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9) , 842-844
- https://doi.org/10.1063/1.95904
Abstract
The thermoelectric power, thermal and electrical conductivity of boron phosphide grown by chemical vapor deposition of hydrogenated compounds were measured in the temperature range from room temperature to 1000 °C and the figure of merit of boron phosphide was evaluated. The figure of merit of 8×10−4 deg−1 was obtained at 1000 °C. This is one of the largest figures of merit at 1000 °C that have ever been obtained.Keywords
This publication has 12 references indexed in Scilit:
- Thermoelectric power of boron phosphide at high temperaturesPhysica Status Solidi (a), 1980
- Si Contamination in Epitaxial Boron MonophosphideJapanese Journal of Applied Physics, 1978
- Measurement of Specific Heat of Boron Monophosphide by AC CalorimetryJapanese Journal of Applied Physics, 1978
- Vapor growth of boron monophosphide using open and closed tube processesJournal of Crystal Growth, 1972
- Self-Consistent Energy Bands and Related Properties of Boron PhosphidePhysical Review B, 1970
- Thermal and Electrical Properties of Heavily Doped Ge-Si Alloys up to 1300°KJournal of Applied Physics, 1964
- Thermal Conductivity of Ge-Si Alloys at High TemperaturesPhysical Review B, 1962
- Determination of Thermal Diffusivity by Utilization of the Thermoelectric EffectReview of Scientific Instruments, 1961
- Semiconducting Properties of Cubic Boron PhosphidePhysical Review Letters, 1960
- InAs1-xPx as a Thermoelectric MaterialJournal of Applied Physics, 1959