In 0.53 Ga 0.47 As liquid phase epitaxy on (100)-InP substrates at low growth temperatures

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Abstract
In0.53Ga0.47As epitaxial layers of high quality and excellent surface morphology have been grown in an automated LPE system. The growth temperature was varied between 500 and 63O°C. Room-temperature Hall measurements indicated a net carrier concentration of n = 8 × 1014 cm−3 and mobility values of μ = 13000 cm2V−1 s−1 at TG 617°C and n = 7.7 × 1015 cm−3 and μ = 9800 cm2 V−1 s−1 at TG = 517°C, respectively.