n -channel m.i.s.f.e.t.s in epitaxial HgCdTe/CdTe

23 October 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (22) , 839-840
https://doi.org/10.1049/el:19800596

Abstract

M.I.S.F.E.T.s have been fabricated in HgCdTe epitaxially grown on CdTe substrates. These planar n-channel f.e.t.s use ZnS as the insulator and Be ion implantation for the source and drain regions. Surface mobilities of 7×10³ cm³/Vs at 77 K are reported.

Keywords

MISFET
II-VI SEMICONDUCTOR
SURFACE MOBILITY
ZNS
BE ION IMPLANTATION
HGCDTE/CDTE
EPITAXIAL GROWTH

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