Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States

Publisher Website
Google Scholar
Abstract
Comparison of near-field and far-field photoluminescence excitation (PLE) spectra gives new insight into the carrier relaxation process in InGaAs/GaAs self-assembled quantum dots. The near-field PLE spectra of single quantum dots clearly show 2D-like continuum states and a number of sharp lines, between a large zero-absorption region due to the quasi-0D density of states and the 2D wetting layer absorption edge. The results reveal an efficient intradot relaxation mechanism, proceeding as follows: The carriers can relax easily within continuum states, and make transitions to the excitonic ground state by resonant emission of localized phonons.