Electrical Properties of Undoped p-CdSb at Low Temperatures
- 1 December 1969
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 27 (6) , 1507-1516
- https://doi.org/10.1143/jpsj.27.1507
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- СВОЙСТВА СУРЬМЯНИСТОГО КАДМИЯ, ЛЕГИРОВАННОГО СЕРЕБРОМ, ПРИ НИЗКИХ ТЕМПЕРАТУРАХCzechoslovak Journal of Physics, 1968
- Negative Magnetoresistance in p‐CdSbPhysica Status Solidi (b), 1968
- Negative Magnetoresistance in Ag Doped p-CdSbJournal of the Physics Society Japan, 1967
- Galvanomagnetic Effects in Cadmium AntimonideJournal of the Physics Society Japan, 1966
- The refractive index of CdSb in the neighbourhood of the absorption edgeCzechoslovak Journal of Physics, 1964
- Impurity Conduction in SiliconPhysical Review B, 1961
- The Semiconducting Properties of CdSbJournal of the Electrochemical Society, 1961
- Impurity Conduction in Transmutation-Doped-Type GermaniumPhysical Review B, 1960
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- The Crystal Structure of CdSb and ZnSb.Acta Chemica Scandinavica, 1948