Measuring the lifetime of minority carriers in MIS structures
- 30 April 1969
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (4) , 301-303
- https://doi.org/10.1016/0038-1101(69)90012-4
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967
- Minority carrier lifetime determination from inversion layer transient responseIEEE Transactions on Electron Devices, 1967
- ELECTROLUMINESCENCE USING GaAs MIS STRUCTURESApplied Physics Letters, 1966
- Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance methodSolid-State Electronics, 1966