In situ in etching technique for l.p.e. InP
- 5 August 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (16) , 394-395
- https://doi.org/10.1049/el:19760302
Abstract
An in situ In etch technique is described for l.p.e. growth of InP. This method eliminates substrate ‘sensitivity’ to orientation difficulties and removes any need for melt supersaturation to obtain good morphology. In addition, in situ etching removes any substrate pitting or type conversion which degrades actual device performance.Keywords
This publication has 0 references indexed in Scilit: