Interstitial-Substitutional Diffusion in a Finite Medium, Gold into Silicon
- 1 January 1965
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 112 (8) , 807-812
- https://doi.org/10.1149/1.2423700
Abstract
A differential equation describing interstitial‐substitutional diffusion is derived. Boundary conditions are selected pertinent to diffusion into a finite medium. Laplace's tranformation is used to solve the differential equation. The result is plotted as a relation between dimensionless quantities. The quantities D 1 and C 01 can be calculated from the intercept and the initial slope, respectively. The theory is applied to the diffusion of gold into silicon wafers of varying thickness.Keywords
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