Ion-implanted n-type diamond: electrical evidence
- 1 May 1995
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 4 (5-6) , 580-585
- https://doi.org/10.1016/0925-9635(94)05261-1
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Doping of diamondDiamond and Related Materials, 1994
- n-type dopants and conduction-band electrons in diamond: Cluster molecular-orbital theoryPhysical Review B, 1993
- Impurity incorporation and doping of diamondPhysica B: Condensed Matter, 1993
- Ohmic contacts formed by ion mixing in the Si-diamond systemIEEE Transactions on Electron Devices, 1989
- Activation of boron-dopant atoms in ion-implanted diamondsPhysical Review B, 1988
- Characterization of conducting diamond filmsVacuum, 1986
- Effective p-type doping of diamond by boron ion implantationJournal of Applied Physics, 1983
- Bipolar transistor action in ion implanted diamondApplied Physics Letters, 1982
- Semiconducting diamondPhysica Status Solidi (a), 1975
- Diamonds Containing Controllable Impurity ConcentrationsNature, 1962