Second-harmonic generation and optical rectification using intersubband transitions in a biased p-type semiconductor quantum well

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Abstract
We present new theoretical results for the second-harmonic and optical rectification coefficients due to intersubband transitions within the valence subbands of a p-type quantum well in a biased external electric field. The results are based on the density matrix approach. Both the parabolic band model and the heavy-hole/light-hole valence band mixing model are utilized. With a moderate electric field of 10 and 150 kV/cm, it is shown that the second-order susceptibilities are many times larger than those of bulk GaAs. The valence band mixing model also gives rise to a broader resonance phenomenon than the parabolic band model.