Comparison of amplifier gain enhancement techniques for GaAs MESFET analogue integrated circuits

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Abstract
Three different techniques are presented for the enhancement of single-stage amplifier gain of GaAs MESFET analogue integrated circuits. The experimental results show that a two-transistor inverting stage provides the lowest mean voltage gain. The highest gain was achieved with a ‘self bootstrapped’ driver and load. These techniques will aid the design of precision alogue integrated circuits in GaAs depletion-mode MESFET technology.