Diffusion length measurements in Schottky barrier GaAs solar cells
- 28 February 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (2) , 213-214
- https://doi.org/10.1016/0038-1101(79)90115-1
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The Effect of Chloride Etching on GaAs Epitaxy Using TMG and AsH3Journal of the Electrochemical Society, 1978
- The Preparation and Properties of Tin Oxide Films Formed by Oxidation of TetramethyltinJournal of the Electrochemical Society, 1976
- Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layersJournal of Applied Physics, 1973
- Optical Properties of n-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence MeasurementsJournal of Applied Physics, 1969