Thermally-induced instabilities and the Staebler-Wronski effect in doped amorphous silicon
- 1 January 1987
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 157 (1) , 179-184
- https://doi.org/10.1063/1.36486
Abstract
The quenched‐in excess conductivity, which results from the thermal equilibrium of the defect structure in doped hydrogenated amorphous silicon, is compared to the Staebler‐Wronski effect. Exposure to light or cooling below the equlibration temperature induces a metastable state described by the thermal equlibrium model. The time dependence of the relaxation of these metastable states is interpreted in terms of the hydrogen glass model.Keywords
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