Epitaxial Growth on Porous Si for a New Bond and Etchback Silicon‐on‐Insulator

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Abstract
A new bond and etchback silicon‐on‐insulator (SOI) has been proposed and demonstrated, in which epitaxial layers on porous Si are transferred by bonding and etching back porous Si. The key processes are epitaxial growth on porous Si and selective removal of porous Si. In the epitaxial layers over porous Si, the major defects are stacking faults, which can be reduced to 103 to 104/cm2 by raising the prebake temperature and lengthening the immersion time in diluted prior to the prebake. Bondable smooth surfaces were formed at growth temperatures below 900°C. A highly selective etchant of was discovered and enabled us to etch off porous Si with a selectivity of 105, leaving behind epitaxial layers on the oxidized handle wafers. The rough as‐etched SOI surface was smooth comparable to that of the commercially available bulk‐polished wafer, and boron concentration in the SOI‐Si layer was simultaneously decreased to , by annealing. Finally, a uniform SOI layer of across a 5 in. wafer was achieved by this method.

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