GaAs/AlGaAs quantum well laser for high-speed applications
- 1 January 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings J Optoelectronics
- Vol. 138 (2) , 117-122
- https://doi.org/10.1049/ip-j.1991.0021
Abstract
GaAs/AlGaAs multiple quantum well ridge waveguide laser diodes have been fabricated using MOVPE and a dry etch process for the ridge structure. The threshold currents of these lasers are 10–15 mA at 25°C and the characteristic temperature T0 exceeds 200 K. Modulation bandwidths of up to 14 GHz and relaxation oscillation frequencies of up to 36 GHz are achieved with these devices. The modulation bandwidth exceeds 10 GHz in a temperature range up to 80°C.Keywords
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