Agglomeration-Free Nanoscale Cobalt Silicide Film Formation Via Substrate Preamorphization
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We have used preamorphization of silicon substrates as a process modification to suppress agglomeration during cobalt disilicide film formation. Planar, continuous and low resistivity (2 layers, acts as a convenient diffusion marker and aids interpretation of the complex stability issues. Preamorphization prior to silicidation was also extended to heavily doped substrates to study the applicability of this approach for junctions and gate contacts. Silicidation of amorphized heavily boron doped substrates produces non uniform layers due to the collision of the advancing silicidation and SPE interfaces. A comparision of concurrent processing, i.e. simulatneous dopant activation and silicide formation, with conventional silicidation of Si+ preamorphized heavily doped(B) substrates is also presented.Keywords
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