A current-generating BSF silicon solar cell fabricated through masked ion implantation

1 December 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (12) , 425-427
https://doi.org/10.1109/EDL.1983.25789

Abstract

A preferentially current-generating back-surface-field (BSF) silicon solar cell with a near-ideal value of the short-circuit current density JSCunder AM1 conditions has been developed through masked ion implantation of the n+-p junction. The BSF cells, fabricated in industrial conditions, possess a conversion efficiency η and a fill-factor FF up to 14.2 and 76.8 percent, respectively. The dependence of JSC, η, and FF on technological parameters are outlined in this letter.

Keywords

SILICON
PHOTOVOLTAIC CELLS
ION IMPLANTATION
IMPLANTS
CURRENT DENSITY
DOPING PROFILES
WIDEBAND
SOLAR POWER GENERATION
TESTING
CONDUCTIVITY

This publication has 0 references indexed in Scilit: