Model for semiconductor laser structures incorporating longitudinal and transverse variations

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Abstract
A description is given of a computer model for the analysis of semiconductor lasers in which longitudinal variations in such devices are taken into account. The construction of the model ensures that a detailed description of the transverse variations in the device is also maintained, and, furthermore, that a variety of cross-sectional geometries may be examined. Numerical results are presented to illustrate longitudinal variations occurring in the device due to asymmetries in facet reflectivities.

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