Reverse recovery properties of amorphous and crystalline Si-based pin diodes
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 905-907
- https://doi.org/10.1016/0378-4363(83)90690-3
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Transient Response of a p-n JunctionJournal of Applied Physics, 1954