Analyses of mode partition and mode hopping in semiconductor lasers
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (1) , 31-38
- https://doi.org/10.1109/3.16237
Abstract
Mode power fluctuations in semiconductors laser due to mode partition and mode hopping are discussed. The power dropout probability P/sub e/ in the mode partition was measured for a wide range, 1.6*10/sup -6/Keywords
This publication has 10 references indexed in Scilit:
- Mode stability analysis of nearly single-longitudinal-mode semiconductor lasersIEEE Journal of Quantum Electronics, 1988
- Mode stability of a two-wavelength Fabry-Perot/distributed-feedback laserJournal of Lightwave Technology, 1988
- Analyses of mode-hopping phenomena in an AlGaAs laserIEEE Journal of Quantum Electronics, 1986
- Mode power partition events in nearly single-frequency lasersJournal of Lightwave Technology, 1985
- Partition fluctuations in nearly single-longitudinal-mode lasersJournal of Lightwave Technology, 1984
- Statistical measurements as a way to study mode partition in injection lasersJournal of Lightwave Technology, 1984
- Dynamic single-mode semiconductor lasers with a distributed reflectorJournal of Lightwave Technology, 1983
- Correlations, transients, bistability, and phase-transition analogy in two-mode lasersPhysical Review A, 1981
- Long time evolution for a one-dimensional Fokker-Planck process: Application to absorptive optical bistabilityIEEE Journal of Quantum Electronics, 1981
- Estimation of the Intra-Band Relaxation Time in Undoped AlGaAs Injection LaserJapanese Journal of Applied Physics, 1980