High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers

10 April 1996

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 2683, 136-145
https://doi.org/10.1117/12.237684

Abstract

Broad-area stripe laser diodes based on GaAs and Al-free spacer and Al-free spacer and waveguide layers were studied and compared to conventional AlGaAs-laser diodes. The structures were grown by low pressure MOVPE (metal organic vapor phase epitaxy). For the active region InGaAs-single quantum wells with an emission wavelength of 915 nm were used. Threshold current density, internal loss and internal efficiency are comparable for the three structures under study. The use of a quaternary spacer layer instead of GaAs improves the performance for laser diodes with a low divergence ((Theta) _{perpendicular} equals 20 degree(s) FWHM). Using a non-optimized facet coating procedure about 1.2 W cw output power at a vertical divergence of (Theta) _{perpendicular} equals 26.5 degree(s) are obtained from a 50 micrometers wide stripe laser with Al-free waveguides.

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