Tunnel injection transit-time diodes for W-band power generation

27 February 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (5) , 511-513
https://doi.org/10.1049/el:19920322

Abstract

GaAs p⁺⁺n⁺n^-n⁺ single-drift tunnel injection transit-time (TUNNETT) diodes for W-band operation have been successfully designed and tested. An output power of 32mW at 93.5 GHz with a DC to RF conversion efficiency of 2.6% was obtained. The oscillations have a clean spectrum in a conventional waveguide cavity.

Keywords

TUNNETT
EHF
WAVEGUIDE CAVITY
2.6 PERCENT
DC/RF CONVERSION EFFICIENCY
POWER GENERATION
32 MW
TRANSMIT-TIME DIODES
W-BAND
SINGLE-DRIFT
93.5 GHZ
TUNNEL INJECTION TRANSIT-TIME
GAAS
P++N+N-N+

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