Effect of sintering time on the resistivity of semiconducting BaTiO3 ceramics
- 28 February 1987
- journal article
- Published by Elsevier in Materials Letters
- Vol. 5 (3) , 99-102
- https://doi.org/10.1016/0167-577x(87)90084-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Determination of the potential barrier height in barium titanate ceramicsSolid-State Electronics, 1984
- A systematic experimental and theoretical investigation of the grain-boundary resistivities of n-doped BaTiO3 ceramicsJournal of Applied Physics, 1977
- Ein modell des korngrenzenwiderstandes in dotierter BaTiO3-keramikSolid-State Electronics, 1973
- Current-voltage characteristics and capacitance of single grain boundaries in semiconducting BaTiO3 ceramicsSolid-State Electronics, 1973
- Diffusion potentials in BaTiO3 and the theory of ptc materialsFerroelectrics, 1970
- Bariumtitanat als sperrschichthalbleiterSolid-State Electronics, 1961
- Investigation of Rare‐Earth Doped Barium TitanateJournal of the American Ceramic Society, 1961
- Processing of Positive Temperature Coefficient ThermistorsJournal of the American Ceramic Society, 1960
- Properties of Semiconductive Barium TitanatesJournal of the Physics Society Japan, 1959