Strained multiquantum well double heterostructure optoelectronic switch and associated heterojunction FET

6 June 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (12) , 1095-1097
https://doi.org/10.1049/el:19910680

Abstract

The first operation of the double heterostructure optoelectronic switch (DOES) as an edge emitting, strained multiquantum well laser is reported. Excellent electrical switching parameters are obtained in broad area devices with lasing threshold current densities of 1.3kA/cm² for 500 μm long cavities. The associated heterojunction FET incorporated into the structure has been separately processed to give a g_m = 65mS/mm for a 2 μm gate length, with V_th = +0.7 V. The simultaneous operation of both devices is essential for future optoelectronic integration.

Keywords

DOUBLE HETEROSTRUCTURE
2 MICRON
500 MICRON
OEIC
EDGE EMITTING
0.7 V
MULTIQUANTUM WELL
BROAD AREA DEVICES
GAAS-INGAAS-ALGAAS
65 MS
DOES
STRAINED MQW/LASER
OPTOELECTRONIC INTEGRATION
HETEROJUNCTION FET
ELECTRICAL SWITCHING PARAMETERS
SEMICONDUCTOR LASER
OPTOELECTRONIC SWITCH

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