Electronic and optical characterization of InGaP grown by gas-source molecular-beam epitaxy
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2) , 966-968
- https://doi.org/10.1116/1.586102
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: