A Monolithic GaAs I.F. Amplifier for Integrated Receiver Applications
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 80, 363-366
- https://doi.org/10.1109/mwsym.1980.1124288
Abstract
A monolithic GaAs integrated amplifier has been constructed for the 500 to 1000 MHz intermediate frequency band. The amplifier provides 8.0 /spl plusmn/ 1.5 dB gain across the band. The output of the amplifier utilizes a source follower configuration to obtain a favorably low output VSWR of less than 1.5:1 (return loss >15 dB). All bias lines with integral bypass capacitors are contained on the chip and this amplifier is suitable for further integration as a building block of a monolithically integrated receiver front end.Keywords
This publication has 3 references indexed in Scilit:
- Ion Implanted GaAs Fet Devices And CircuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A monolithic GaAs FET RF signal generation chipPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- Monolithic broadband GaAs f.e.t. amplifiersElectronics Letters, 1976