Growth of polymer films on compound semiconductors and dry etching process
- 1 October 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (10) , 6567-6569
- https://doi.org/10.1063/1.325720
Abstract
This paper gives some results on the formation of plasma-polymerized polysiloxane films on GaAs substrate in order to improve the dielectric-semiconductor interface properties. Growth rate of polymer films is studied as a function of monomer pressure and time. A dry etching process allowing a good engraving of the polymer film is reported.This publication has 15 references indexed in Scilit:
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