Boron diffusivity in nonimplanted diamond single crystals measured by impedance spectroscopy
- 1 August 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (3) , 1184-1186
- https://doi.org/10.1063/1.346714
Abstract
Boron diffusivity in single-crystal diamond has been investigated. To this aim, a novel method using impedance spectroscopy for the study of the atomic diffusivity in wide-gap semiconductor has been developed, along with a model for the analysis of the dielectric response function. The advantages of this procedure are discussed. Boron diffusivity in diamond has been determined to be 6.9×10−20 cm2 s−1 at 800 °C. A discussion of the results and a comparison with previous estimates are presented.This publication has 9 references indexed in Scilit:
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