Theory of amplification of the spin effect in a nonlinear semiconductor system

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  • 15 July 2005
Abstract
Room temperature amplification of the magneto-resistive effect is shown to be possible in a hybrid metal-semiconductor nonlinear system. In the diffusive regime, currents flowing between three ferromagnetic contacts are efficiently controlled by two voltages and depend sensitively on the alignment of magnetizations. Modeling the system with conservative parameters demonstrates the novel possibility of transferring the digital information of a magnet direction to the zero or measurable current out of one terminal. This feature, in conjunction with a feasible design, shows promise in integration of magnetic memory with semiconductor electronics.

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