Recent Progress in SiC Microwave MESFETs
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Monte Carlo calculations of the temperature- and field-dependent electron transport parameters for 4H-SiCJournal of Applied Physics, 1995
- 4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHzIEEE Electron Device Letters, 1994
- Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and DiamondJournal of Applied Physics, 1964