Terahertz emission from electric field singularities in biased semiconductors
- 1 December 1996
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 21 (23) , 1924-1926
- https://doi.org/10.1364/ol.21.001924
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 9 references indexed in Scilit:
- Ultrafast pulse generation in photoconductive switchesIEEE Journal of Quantum Electronics, 1996
- Femtosecond reflectivity measurements and second harmonic generation in nonresonant excitation of photoconductive switchesApplied Physics Letters, 1994
- Far-infrared light generation at semiconductor surfaces and its spectroscopic applicationsIEEE Journal of Quantum Electronics, 1992
- Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injectionApplied Physics Letters, 1991
- Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interfaceApplied Physics Letters, 1991
- Characterization of an optoelectronic terahertz beam systemIEEE Transactions on Microwave Theory and Techniques, 1990
- Ultrafast coplanar air-transmission linesApplied Physics Letters, 1990
- Mechanism of subpicosecond electrical pulse generation by asymmetric excitationApplied Physics Letters, 1989
- Subpicosecond electrical pulse generation using photoconductive switches with long carrier lifetimesApplied Physics Letters, 1989