Photoinduced absorption and photoinduced absorption-detected ESR in P-doped a-Si:H
- 1 January 1984
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 120 (1) , 8-15
- https://doi.org/10.1063/1.34724
Abstract
Photoinduced absorption (PA) and photoinduced absorption‐detected ESR (PADESR) measurements have been carried out on P‐doped a‐Si:H. We have observed two PA components in the PA spectra at low temperatures for highly doped samples, which correspond to excitation of trapped electrons at P + 4 and excitation of trapped holes at P + 4−D − pairs. For these samples, the observed PADESR spectrum consists of a narrow line and a broad line (hyperfine doublet), which are identified as being due to trapped holes at P + 4−D − pairs and phosphorus dangling bonds (P 0 2), respectively.Keywords
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