The effects of neon implantation on the magnetic properties of garnet layers

Publisher Website
Google Scholar
Abstract
The results of a study on the effects on neon implantation on the magnetic properties of La, Ga:YIG (yttrium-iron-garnet) and Tm, Ca, Ge:YIG films are presented. The implantation dosage ranged from 5×1013 to 1016 ions/cm2, while the energy was kept constant at 300 keV. The films were studied by the ferromagnetic resonance technique and by double-crystal x-ray diffraction. The observed resonance spectra, also recorded after successive etch steps, were compared with the relevant theory by solving the equation of motion numerically. This comparison yielded profiles for the field for uniform resonance, and for the ratio of the exchange stiffness constant and the saturation magnetization through the ion-implanted part of the layer. For the latter, a reduction to 55% of its initial value is found at the depth at which also the maximum in the strain distribution occurs. It is found that the field for uniform resonance in the ion-implanted part of the film is considerably higher than for the bulk of the film, and varies only slowly as a function of depth. When the interface between the ion-implanted region and the bulk is reached, a steep change takes place to the bulk value. Good agreement was found between the maximum of the strain profile, as deduced from the double x-ray measurements, and the extremes in the profiles mentioned above.