Transport Properties of a Many-Valley Semiconductor

1 March 1955

journal article
website
Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal

Vol. 34 (2) , 237-290
https://doi.org/10.1002/j.1538-7305.1955.tb01472.x

Abstract

The simple model of a semiconductor, based on a single effective mass for the charge carriers and a spherical shape for the surfaces of constant energy, is now known to be inadequate for most of the semiconductors which have been extensively studied ...