Large-hole diffusion length and lifetime in InGaAs/InP double-heterostructure photodiodes

27 March 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (7) , 360-362
https://doi.org/10.1049/el:19860245

Abstract

In planar InGaAs/InP PIN photodiodes the minority-hole diffusion length and lifetime have been evaluated from measurements of the response to peripheral steady-state or pulse illumination. Very large values up to 74 μm and of 6 μs have been obtained for low-doped InGaAs. This high material quality could be revealed because surface effects are avoided in the utilised double heterostructures.

Keywords

MATERIAL QUALITY
SURFACE EFFECTS
MINORITY-HOLE DIFFUSION LENGTH
LIFETIME
INGAAS/INP DOUBLE-HETEROSTRUCTURE PHOTODIODES
LOW-DOPED INGAAS
PULSE ILLUMINATION
PLANAR INGAAS/INP PIN PHOTODIODES
SEMICONDUCTORS
DH PHOTODIODES

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