On the mass transport properties of the GeSe-GeI4 system under normal and reduced gravity conditions
- 1 June 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 89 (2-3) , 242-250
- https://doi.org/10.1016/0022-0248(88)90408-3
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Mass spectroscopic characterization of the GeSe: GeI4 vapor transport systemJournal of Crystal Growth, 1987
- Initial observations of GeSe-xenon transport experiments performed on the D1 space flightThe Science of Nature, 1986
- Crystal Growth and Transport Rates of the GeSe ‐ Xenon System under Microgravity ConditionsJournal of the Electrochemical Society, 1986
- Chemical vapor transport and thermal behavior of the GeSe-GeI4 system for different inclinations with respect to the gravity vector; Comparison with theoretical and microgravity dataJournal of Crystal Growth, 1982
- Diffusive and convective vapor transport in the GeSe—GeI4 systemJournal of Crystal Growth, 1981
- Morphology and Transport Rates of Mixed IV–VI Compounds in Micro‐GravityJournal of the Electrochemical Society, 1977
- Crystal growth and transport rates of GeSe and GeTe in micro-gravity environmentJournal of Crystal Growth, 1975
- The Sublimation Kinetics of GeSe Single CrystalsZeitschrift für anorganische und allgemeine Chemie, 1975
- KNUDSEN measurements of the sublimation and the Heat of Formation of GeSeZeitschrift für anorganische und allgemeine Chemie, 1974
- The chemical transport rates and crystal Morphology of GeSeZeitschrift für anorganische und allgemeine Chemie, 1973